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| UTC D965SS / D965ASS NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES *Collector current up to 5A * D965SS : Collector-Emitter voltage up to 20 V * D965ASS : Collector-Emitter voltage up to 30 V 2 1 APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit 3 MARKING(D965SS) MARKING(D965ASS) SOT-23 D65 D65A 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETER Collector-base voltage Collector-emitter voltage D965SS D965ASS Emitter-base voltage Collector dissipation(Ta=25C) Collector current Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Pc Ic Tj TSTG RATING 40 20 30 7 750 5 150 -65 ~ +150 UNIT V V V mW A C C ELECTRICAL CHARACTERISTICS(Ta=25C,unless otherwise specified) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage D965SS D965ASS Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current SYMBOL BVCBO BVCEO BVEBO ICBO IEBO TEST CONDITIONS Ic=100A,IE=0 Ic=1mA,IB=0 MIN 40 20 30 7 TYP MAX UNIT V V V nA nA IE=10A,Ic=0 VCB=10V,IE=0 VEB=7V,Ic=0 100 100 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R206-016,B UTC D965SS / D965ASS NPN EPITAXIAL SILICON TRANSISTOR DC current gain(note) hFE VCE=2V,Ic=1mA VCE=2V,Ic=0.5A VCE=2V,Ic=2A 200 230 150 800 PARAMETER Collector-emitter saturation voltage Current gain bandwidth product Output capacitance SYMBOL VCE(sat) fT Cob TEST CONDITIONS Ic=3A, IB= 0.1A VCE=6V,Ic=50mA VCB=20V,IE=0 f=1MHz MIN TYP 150 MAX 1 50 UNIT V MHz pF CLASSIFICATION OF hFE2 RANK RANGE Q 230-380 R 340-600 S 560-800 TYPICAL CHARACTERISTIC CURVES Fig.1 Static characteristics 3.0 Fig.2 DC current Gain 3 10 4 10 Fig.3 Base-Emitter on Voltage IB=3.0mA IB=2.5mA IB=2.0mA Ic,Collector current (A) HFE, DC current Gain 2.5 Ic,Collector current (mA) VCE=2V 3 10 2 10 2.0 IB=1.5mA IB=1.0mA IB=0.5mA VCE=2V 1.5 1 10 2 10 1.0 0 0 0.4 0.8 1.2 1.6 2.0 0 10 -1 10 1 10 2 10 3 10 4 10 1 10 0 0.2 0.4 0.6 0.8 1.0 Collector-Emitter voltage ( V) Ic,Collector current (mA) Base-Emitter voltage (V) Fig.4 Saturation voltage 4 10 3 10 Fig.5 Current gain-bandwidth product 3 10 Fig.6 Collector output Capacitance Ic=10*IB Current Gain-bandwidth product,f T(MHz) Saturation voltage (mV) Cob,Capacitance (pF) VCE=6V VBE(sat) 2 10 3 10 2 10 f=1MHz IE=0 VCE(sat) 2 10 1 10 1 10 1 10 0 10 1 10 2 10 3 10 4 10 0 10 0 10 1 10 2 10 3 10 0 10 10 -1 0 10 1 10 2 10 Ic,Collector current (mA) Ic,Collector current (mA) Collector-Base voltage (V) UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R206-016,B UTC D965SS / D965ASS NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R206-016,B |
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